Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures

Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures

We report on steady-state photoluminescence spectra from a strained InAs/In0.53Ga0.47As/AlAs single quantum well (SQW) structure grown by molecular beam epitaxy. Strong luminescence in the wavelength of ∼1.9 μm for the well width of 7 ML was obtained. The radiative process in the InAs quantum well i...

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Bibliographic Details
Published in:Applied physics letters Vol. 68; no. 1; pp. 78 - 80
Main Authors: Shen, W. Z., Shen, S. C., Chang, Y., Tang, W. G., Lu, Y., Li, A. Z.
Format: Journal Article
Language:English
Published: 01-01-1996
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Summary:We report on steady-state photoluminescence spectra from a strained InAs/In0.53Ga0.47As/AlAs single quantum well (SQW) structure grown by molecular beam epitaxy. Strong luminescence in the wavelength of ∼1.9 μm for the well width of 7 ML was obtained. The radiative process in the InAs quantum well is dominated by the excitonic luminescence. Based on a steadystate of the lumines- cence intensity allow us to conclude that the photogenerated carriers in the well come from tunneling from the InGaAs layer via the AlAs barrier.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116763