Ballistic nano-devices for high frequency applications

• Published in: Thin solid films Vol. 515; no. 10; pp. 4321 - 4326
• Main Authors: Bollaert, S., Cappy, A., Roelens, Y., Galloo, J.S., Gardes, C., Teukam, Z., Wallart, X., Mateos, J., Gonzalez, T., Vasallo, B.G., Hackens, B., Berdnarz, L., Huynen, I.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 26-03-2007; Elsevier Science; Elsevier
• Subjects: Applied sciences; Ballistic; Electronics; Exact sciences and technology; Indium phosphide; Micro- and nanoelectromechanical devices (mems/nems); Nanostructures; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ballistic; Indium phosphide; Nanostructures; Rectifier effect; Monte Carlo method; Limiting factor; Capacitance; Nanoelectromechanical device; Nanostructure; Nanotechnology; Room temperature; III-V semiconductors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2006.07.178

In this paper, we present a study on three-terminal ballistic junction and their applications to rectifiers and MUX/DEMUX. Rectifying effect is observed up to 94 GHz at room temperature. Although THz frequency performance has been demonstrated by Monte Carlo simulation, the high impedance of the nano-device combined with the parasitic capacitances is a limiting factor.