Determination of the parameters for the back-to-back switched Schottky barrier structures

• Published in: Current applied physics Vol. 10; no. 2; pp. 652 - 654
• Main Authors: Ahmetoglu (Afrailov), M., Akay, S.K.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-03-2010; 한국물리학회
• Subjects: Gallium arsenide; Metal–semiconductor–metal structures; Schottky barrier; 물리학; 73.61.Ey; 73.40.Sx; Gallium arsenide; Metal–semiconductor–metal structures; 73.30.+y; Schottky barrier
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2009.08.012

The Cr/
n-GaAs/Cr and Ag/
p-GaAs/Ag metal–semiconductor–metal (MSM) Schottky contacts have been fabricated by reactive radio frequency (RF) sputtering system. The current–voltage
(
I
–
V
)
and capacitance–voltage
(
C
–
V
)
characteristics of the devices have been investigated in the temperature range of 80–316
K for the back-to-back switched Schottky barrier contacts. These measurements establish that the room temperature barrier height determined from reverse branch of the current–voltage characteristics is close to the value obtained from capacitance–voltage measurements.