Exciton-exciton annihilation in hBN

Exciton-exciton annihilation in hBN

Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride by cathodoluminescence at low temperature. Thanks to a careful tuning of the exciton density by varying either the current or the focus of the inciden...

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Bibliographic Details
Published in:Applied physics letters Vol. 114; no. 23
Main Authors: Plaud, A., Schué, L., Watanabe, K., Taniguchi, T., Fossard, F., Ducastelle, F., Loiseau, A., Barjon, J.
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 10-06-2019
Subjects:
Applied physics
Boron nitride
Bulk density
Cathodoluminescence
Condensed Matter
Electron beams
Excitons
Luminescence quenching
Materials Science
Physics
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Summary:Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride by cathodoluminescence at low temperature. Thanks to a careful tuning of the exciton density by varying either the current or the focus of the incident electron beam, we could estimate an EEA rate of 2 × 10−6 cm3 s−1 at T = 10 K, the highest reported so far for a bulk semiconductor. Expected to be even stronger in nanotubes or atomic layers, EEA probably contributes to the luminescence quenching observed in low-dimensionality BN materials.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5090218