Analysis of device parameters of Al/In2O3/p-Si Schottky diode

• Published in: Microelectronic engineering Vol. 105; pp. 13 - 17
• Main Authors: Gupta, R.K., Yakuphanoglu, F.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-05-2013; Elsevier
• Subjects: Aluminum; Applied sciences; Capacitance–voltage; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Current–voltage; Deposition; Devices; Diodes; Direct current; Electric potential; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Indium oxide; Indium oxides; Interfaces; Materials science; Materials synthesis; materials processing; Physics; Schottky diode; Schottky diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sol–gel; Surface double layers, schottky barriers, and work functions; Current–voltage; Capacitance–voltage; Sol–gel; Indium oxide; Schottky diode; Grain size analysis; Voltage current curve; Roughness; Charge transport; Thin film; Transport process; Ideality; Spectrometry; III-VI compound; Direct current; p type semiconductor; Silicon; Series resistance; Root mean square value; Voltage capacity curve; Electrical impedance; Grain size; Interface state; Sol-gel; Trap; Electrical measurement; Sol gel process; Capacitance-voltage; Current-voltage; Barrier height; Schottky barrier diode; Schottky barrier
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2012.12.026

In this manuscript for the first time, we are reporting the fabrication of Schottky diode based on In2O3/p-Si using sol–gel spin coating method. The device parameters were investigated using direct current current–voltage (I–V) and impedance spectroscopy. The series resistance profile of the diode was extracted to show the presence of the interface states changing with frequency. [Display omitted]
► Sol–gel technique was used to deposit In2O3 on p-Si. ► The forward bias semi-log I–V characteristics show ohmic behavior at low bias voltage. ► I–V characteristics follow TCLC mechanism at higher bias voltage. ► The capacitance of device is independent of the voltage and frequency at higher positive voltage.
Thin film of indium oxide (In2O3) is deposited on p-silicon substrate using sol–gel spin technique. The sol–gel spin deposited film is very smooth with grain size and root mean square surface roughness of ∼40nm and ∼7.9nm, respectively. The device parameters of Al/In2O3/p-Si Schottky diode were investigated using direct current current–voltage (I–V) and impedance spectroscopy. The ideality factor and barrier height of the diode were determined to be 1.07±0.03 and 0.72±0.02eV, respectively. At higher voltages, the charge transport mechanism of the diode is controlled by a trap-charge limited conduction mechanism (TCLC). The series resistance profile of the diode was extracted to show the presence of the interface states changing with frequency.