Strain behavior of epitaxial Si1−xCx films on silicon substrates during dry oxidation

• Published in: Thin solid films Vol. 546; pp. 226 - 230
• Main Authors: Kim, S.-W., Yoo, J.-H., Koo, S.-M., Lee, H.-J., Ko, D.-H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-11-2013; Elsevier
• Subjects: Carbon; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Compressive properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Epitaxy; Exact sciences and technology; Formations; Interstitials; Materials science; Mechanical and acoustical properties; Methods of deposition of films and coatings; film growth and epitaxy; Nanobeam diffraction; Oxidation; Physical properties of thin films, nonelectronic; Physics; Segregations; Si1 − xCx; Silicon substrates; Strain engineering; Strain relaxation; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vacuum deposition; Oxidation; Si1−xCx; Strain relaxation; Nanobeam diffraction; Strain engineering; Epitaxial layers; C; Segregation; Epitaxy; Mechanical properties; Carbon; Thin films; CVD; Compressive stress; Precipitation; Stress relaxation; Transmission electron microscopy; Si; Ultrahigh vacuum; Nanostructured materials; Vacuum deposition
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.05.131

The effects of the oxidation of Si1−xCx films (x=0.0125) on Si (100) substrates were evaluated. Epitaxial Si1−xCx (x=0.0125) films were deposited by ultrahigh-vacuum chemical vapor deposition at 600°C. Oxidation at 800°C and 900°C under an O2 ambient in a tube furnace resulted in a decrease in substitutional C concentration, due to the formation of interstitial carbon or β-SiC precipitation. Transmission electron microscopy analyses indicated that the formation of β-SiC on the Si1−xCx layer occurred when the oxidation temperature exceeded 900°C. This indicates that relaxation of compressive stress in the depth direction occurred as the result of the formation of β-SiC. No evidence was found for the segregation of carbon at the top of the Si1−xCx layers during the oxidation of the Si1−xCx layer unlike the Ge pile up that occurs during the oxidation of Si1−xGex layers.
•The effects of the oxidation of Si1−xCx films on Si (100) wafers were evaluated.•Strain relaxation was examined via high resolution X-ray diffraction method.•Strain relaxation occurred as the result of the formation of β-SiC phase.•Local strain variation was confirmed by using nanobeam electron diffraction.