Graphene applications in Schottky barrier solar cells

• Published in: Thin solid films Vol. 522; pp. 390 - 394
• Main Authors: Lancellotti, L., Polichetti, T., Ricciardella, F., Tari, O., Gnanapragasam, S., Daliento, S., Di Francia, G.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-11-2012; Elsevier
• Subjects: Applied sciences; Barriers; Capacitance; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Devices; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Energy; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Graphene; Materials science; Mathematical models; Natural energy; Photovoltaic cells; Photovoltaic conversion; Physical properties; Physics; Schottky barrier; Semiconductors; Solar cell; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; Specific materials; Structure and morphology; thickness; Surface double layers, schottky barriers, and work functions; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Workfunction; Solar cell; Capacitance; Graphene; Workfunction; Schottky barrier; Solar cells; Atomic force microscopy; Work functions; Semiconductor materials; Schottky barriers; Digital simulation; Theoretical study; Raman spectroscopy; Physical properties; CV characteristic; Optical forces; Equivalent circuits
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2012.09.040

We report a theoretical study about the performances of graphene on semiconductor Schottky barrier solar cells with the aim to show the potentiality of this kind of device. The simulations are carried by a generalized equivalent circuit model, where the circuital parameters are strictly dependent on the physical properties of the graphene and semiconductor which form the Schottky junction. We have realized graphene samples and characterized them by optical and atomic force microscopy, and Raman spectroscopy. Capacitance–voltage measurements have been made on some “ad hoc” graphene based devices in order to obtain graphene workfunction, a very essential physical parameter. The estimated value is compatible with four layer graphene. This result is in agreement with the morphological characterizations of our material.
► An equivalent circuit model simulates graphene based Schottky barrier solar cells. ► Graphene flakes are identified through Raman spectroscopy and Atomic Force Microscopy. ► Workfunction estimation by Capacitance–Voltage (C–V) on graphene based devices ► A multilayered structure is evidenced by morphological and C–V characterization.