Optical and electrical properties of transparent conducting gallium-doped ZnO electrodes prepared by atomic layer deposition for application in organic solar cells

• Published in: Thin solid films Vol. 546; pp. 271 - 274
• Main Authors: Song, Yoon Seog, Seong, Nak Jin, Choi, Kyu Jeong, Ryu, Sang Ouk
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-11-2013; Elsevier
• Subjects: ALD; Applied sciences; Bulk hetero junction; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conduction; Cross-disciplinary physics: materials science; rheology; Deposition; Electrical resistivity; Electrodes; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Energy; Equivalence; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Natural energy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Organic solar cell; P3HT; PCBM; PCE; Photovoltaic cells; Photovoltaic conversion; Physics; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; TMG; Vapor phase epitaxy; growth from vapor phase; Zinc oxide; Bulk hetero junction; PCE; Organic solar cell; ALD; P3HT; PCBM; TMG; Solar cells; Gallium; Atomic layer method; Electrical conductivity; Electrical properties; Doping; Crystal growth from vapors; Layer thickness; Indium oxide; Zinc; Thiophene derivative polymer; Tin oxide; Optical properties; Absorption spectra; Nanomaterial synthesis
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.04.063

Transparent and conducting gallium-doped ZnO electrodes were fabricated by means of atomic layer deposition. The electrode showed the lowest resistivity of 7.19×10−4Ωcm at a 5% cyclic layer deposition ratio of Trimethyl-gallium and Diethyl-zinc chemicals. The electrodes showed minimum resistivity when deposited at a temperature of 250°C. The electrode also showed optical transmittance of about 82%–89% with film thicknesses between 100nm and 300nm. An organic solar cell made with a 300-nm-thick gallium-doped ZnO electrode exhibited 2.5% power conversion efficiency, and an efficiency equivalent to that of cells made with conventional indium tin oxide electrodes.
•Ga-doped ZnO thin films were successfully grown by atomic layer deposition•The grown thin film has low resistivity compatible to conventional ITO electrodes•The Ga-doped ZnO films were successfully integrated into organic solar cells•The power conversion efficiency was equivalent to the cells with ITO electrodes