3-D position sensitive CdZnTe gamma-ray spectrometers

Two 3-D position-sensitive room temperature semiconductor γ-ray spectrometers have been built using 1 cm 3 cubic CdZnTe crystals. The lateral coordinates of γ-ray interaction are obtained from the location of the 11( x)×11( y) pixellated anodes and the depth ( z) is obtained from the ratio of the si...

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Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 422; no. 1; pp. 173 - 178
Main Authors: He, Z., Li, W., Knoll, G.F., Wehe, D.K., Berry, J., Stahle, C.M.
Format: Journal Article
Language:English
Published: Elsevier B.V 1999
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Abstract Two 3-D position-sensitive room temperature semiconductor γ-ray spectrometers have been built using 1 cm 3 cubic CdZnTe crystals. The lateral coordinates of γ-ray interaction are obtained from the location of the 11( x)×11( y) pixellated anodes and the depth ( z) is obtained from the ratio of the signals coming from the cathode and the anode. Energy spectra from 662 keV incident γ-rays have been collected from each of the 11 (x)×11 (y)×20 (z) voxels in both of the CdZnTe devices. After corrections for electron trapping, the difference of weighting potentials in 3-D, and for the gain variation of the readout circuitry, energy resolutions of 1.70% (11.3 keV) FWHM and 1.84% (12.2 keV) FWHM were obtained at 662 keV γ-ray energy on the first and second detectors, respectively, from the whole bulk for single-pixel events. Possible improvements in the detector performance are discussed.
AbstractList Two 3-D position-sensitive room temperature semiconductor γ-ray spectrometers have been built using 1 cm 3 cubic CdZnTe crystals. The lateral coordinates of γ-ray interaction are obtained from the location of the 11( x)×11( y) pixellated anodes and the depth ( z) is obtained from the ratio of the signals coming from the cathode and the anode. Energy spectra from 662 keV incident γ-rays have been collected from each of the 11 (x)×11 (y)×20 (z) voxels in both of the CdZnTe devices. After corrections for electron trapping, the difference of weighting potentials in 3-D, and for the gain variation of the readout circuitry, energy resolutions of 1.70% (11.3 keV) FWHM and 1.84% (12.2 keV) FWHM were obtained at 662 keV γ-ray energy on the first and second detectors, respectively, from the whole bulk for single-pixel events. Possible improvements in the detector performance are discussed.
Author Wehe, D.K.
Berry, J.
Knoll, G.F.
Li, W.
He, Z.
Stahle, C.M.
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  organization: Orbital Sciences Corp./NASA Goddard Space Flight Center, Code 553, Greenbelt, MD 20771, USA
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Snippet Two 3-D position-sensitive room temperature semiconductor γ-ray spectrometers have been built using 1 cm 3 cubic CdZnTe crystals. The lateral coordinates of...
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Title 3-D position sensitive CdZnTe gamma-ray spectrometers
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