High performance low temperature solution-processed zinc oxide thin film transistor

• Published in: Thin solid films Vol. 519; no. 16; pp. 5623 - 5628
• Main Authors: Theissmann, R., Bubel, S., Sanlialp, M., Busch, C., Schierning, G., Schmechel, R.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-06-2011; Elsevier
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Crystal structure; Deposition from Solution; Devices; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronics; Exact sciences and technology; Physics; Printable electronics; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solubility; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin film transistor; Thin film transistors; Thin films; Transistors; Transparent conducting oxide; Zinc oxide; Zinc oxide; Thin film transistor; Printable electronics; Deposition from Solution; Transparent conducting oxide; Thin film device; Solubility; Annealing temperature; Layer thickness; Thin film; Ammonia; Silicon oxides; Dielectric thin films; Aqueous solution; Thermal annealing
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.02.073

Amorphous zinc oxide thin films have been processed out of an aqueous solution applying a one step synthesis procedure. For this, zinc oxide containing crystalline water (ZnO⋅×H2O) is dissolved in aqueous ammonia (NH3), making use of the higher solubility of ZnO⋅×H2O compared with the commonly used zinc oxide. Characteristically, as-produced layers have a thickness of below 10nm. The films have been probed in standard thin film transistor devices, using silicon dioxide as dielectric layer. Keeping the maximum process temperature at 125°C, a device mobility of 0.25cm2V−1s−1 at an on/off ratio of 106 was demonstrated. At an annealing temperature of 300°C, the performance could be optimized up to a mobility of 0.8cm2V−1s−1.