Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal–insulator–metal capacitors

The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal–insulator–metal (MIM) and metal–oxide–semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present...

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Bibliographic Details
Published in:	Thin solid films Vol. 518; no. 15; pp. 4467 - 4472
Main Authors:	Thangadurai, P., Mikhelashvili, V., Eisenstein, G., Kaplan, W.D.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 31-05-2010 Elsevier
Subjects:	Applied sciences Capacitors Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Deposition Devices Dielectrics EDS EELS Electrodes Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gates HAADF Hafnium High-k HRTEM Materials science Methods of deposition of films and coatings; film growth and epitaxy Microstructure MIM capacitors Physics Spectrum imaging Structure and morphology; thickness Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Tantalum oxides Thin film structure and morphology Vapor phase epitaxy; growth from vapor phase Spectrum imaging High-k EDS EELS MIM capacitors HRTEM HAADF Chemical analysis Semiconductor devices Capacitors Local structure Imaging Hafnium Crystal structure Tantalum oxide Intermixing Thick films Dispersive spectrometry Interfaces Transmission electron microscopy EEL spectroscopy Silicon oxides Morphology Logic gates High k dielectric Microstructure Gates Electron beam evaporation
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Summary:	The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal–insulator–metal (MIM) and metal–oxide–semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta 2O 5 at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN x O y and HfTiO y , and intermixing between the nearby sub-layers including deposited SiO 2. Hf-rich clusters were found in the HfN x O y layer adjacent to the Ta 2O 5 layer.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2010.03.002