Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon

• Published in: AIP advances Vol. 5; no. 3; pp. 037107 - 037107-6
• Main Authors: Lv, Chunyan, Zhu, Chen, Wang, Canxing, Li, Dongsheng, Ma, Xiangyang, Yang, Deren
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01-03-2015; AIP Publishing LLC
• Subjects: Annealing; Cerium oxides; Electroluminescence; Energy levels; Injection current; Metal oxide semiconductors; MOS devices; Semiconductor devices; Vacancies
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.4914355

We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO2 films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO2 film is much stronger than that from the counterpart with the 450 °C-annealed CeO2 film. This is due to that the 550 °C-annealed CeO2 film contains more Ce3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f1 energy band pertaining to Ce3+ ions leads to the UV-Vis EL.