Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes

• Published in: Japanese Journal of Applied Physics Vol. 44; no. 10R; p. 7296
• Main Authors: Yang, Hyuck Soo, Han, Sang Youn, Heo, Y. W., Baik, K. H., Norton, D. P., Pearton, S. J., Ren, F., Osinsky, A., Dong, J. W., Hertog, B., Dabiran, A. M., Chow, P. P., Chernyak, L., Steiner, T., Kao, C. J., Chi, G. C.
• Format: Journal Article
• Language: English
• Published: 01-10-2005
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.44.7296

We report on the fabrication of UV light-emitting diodes (LEDs) based on a
p
–
n
junction
n
-ZnMgO/
n
-ZnO/
p
-AlGaN/
p
-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on
p
-AlGaN/
p
-GaN
c
-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.