Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics

We demonstrate self-alignment of epitaxial Ag nanocrystals on top of low-density near-surface InAs quantum dots (QDs) grown by molecular beam epitaxy. The Ag nanocrystals support a surface plasmon resonance that can be tuned to the emission wavelength of the QDs. Photoluminescence measurements of su...

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Bibliographic Details
Published in:	Applied physics letters Vol. 98; no. 24
Main Authors:	Urbańczyk, Adam, van Otten, Frank W. M., Nötzel, Richard
Format:	Journal Article
Language:	English
Published:	United States 13-06-2011
Subjects:	ARSENIC COMPOUNDS ARSENIDES CRYSTAL GROWTH METHODS DENSITY ELEMENTS EMISSION EPITAXY FABRICATION GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS LAYERS LUMINESCENCE MATERIALS METALS MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES PHOTOLUMINESCENCE PHOTON EMISSION PHYSICAL PROPERTIES PNICTIDES QUANTUM DOTS RESONANCE SEMICONDUCTOR DEVICES SEMICONDUCTOR MATERIALS SILVER SURFACES TRANSITION ELEMENTS WAVELENGTHS
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Summary:	We demonstrate self-alignment of epitaxial Ag nanocrystals on top of low-density near-surface InAs quantum dots (QDs) grown by molecular beam epitaxy. The Ag nanocrystals support a surface plasmon resonance that can be tuned to the emission wavelength of the QDs. Photoluminescence measurements of such hybrid metal-semiconductor nanostructures reveal large enhancement of the emission intensity. Our concept of epitaxial self-alignment enables the integration of plasmonic functionality with electronic and photonic semiconductor devices operating down to the single QD level.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.3596460