Microstructure and tribological behaviour of super-hard Ti–Si–C–N nanocomposite coatings deposited by plasma enhanced chemical vapour deposition

In this study, a series of new quaternary Ti–Si–C–N nanocomposite coatings have been deposited on HSS substrate at 550 °C using an industrial set-up of pulsed direct circuit plasma enhanced chemical vapour deposition (PECVD) equipment with a gas mixture of TiCl 4/SiCl 4/H 2/N 2/CH 4/Ar. The composit...

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Published in:Thin solid films Vol. 496; no. 2; pp. 438 - 444
Main Authors: Ma, Dayan, Ma, Shengli, Dong, Hanshan, Xu, Kewei, Bell, Tom
Format: Journal Article
Language:English
Published: Lausanne Elsevier B.V 21-02-2006
Elsevier Science
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Summary:In this study, a series of new quaternary Ti–Si–C–N nanocomposite coatings have been deposited on HSS substrate at 550 °C using an industrial set-up of pulsed direct circuit plasma enhanced chemical vapour deposition (PECVD) equipment with a gas mixture of TiCl 4/SiCl 4/H 2/N 2/CH 4/Ar. The composition of the coatings can be controlled through the adjustment of CH 4 flow rate and the mixing ratio of the chlorides. Detailed structural and chemical characterisations using transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) suggest the formation of a Ti (C, N)/a-C/a-Si 3N 4 nanocomposite structure. Ti (C, N) films show a (200) texture, which change to random orientation of the crystallites when the silicon content reaches about 9 at.%. The tribological behaviour of these coatings was investigated at room and elevated temperature. The results show that the nanocomposite Ti–Si–C–N coatings with low Si and high C contents have a lower friction coefficient of 0.17–0.35 at room temperature. The Ti–Si–C–N nanocomposite coating containing 12 at.% Si and 30 at.% C shows excellent tribological properties with a low friction coefficient of 0.30 and a low wear rate of 4.5 × 10 5 mm 3 N − 1 m − 1 at 550 °C.
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.08.379