Photoelectrochemical properties of poly(terthiophene) films modified with a fullerene derivative

This work reports on the photoelectrochemical properties of an interface comprised by poly(terthiophene) films electrochemically synthesized onto indium–tin oxide substrates and modified with 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61. Important photoelectrical parameters, such as flat band pote...

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Bibliographic Details
Published in:Thin solid films Vol. 515; no. 4; pp. 2644 - 2649
Main Authors: Santos, Marcos J.L., Girotto, Emerson M., Nogueira, Ana Flávia
Format: Journal Article
Language:English
Published: Lausanne Elsevier B.V 05-12-2006
Elsevier Science
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Summary:This work reports on the photoelectrochemical properties of an interface comprised by poly(terthiophene) films electrochemically synthesized onto indium–tin oxide substrates and modified with 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61. Important photoelectrical parameters, such as flat band potential, density of charge carriers and depletion layer width were determined for the pristine and hybrid films. The cathodic photocurrent reflected the p-type semiconducting behavior of the electrosynthesized poly(terthiophene)s. Addition of the acceptor molecule improves the photocurrent at zero bias (∼6 μA cm−2 at 100 mW cm−2) indicating the fullerene derivative acts as an exciton dissociation center, improving the number of charge carriers transported through the polymer to reach the solid–liquid electrolyte interface.
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ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2006.04.021