Photoelectrochemical properties of poly(terthiophene) films modified with a fullerene derivative
This work reports on the photoelectrochemical properties of an interface comprised by poly(terthiophene) films electrochemically synthesized onto indium–tin oxide substrates and modified with 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61. Important photoelectrical parameters, such as flat band pote...
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Published in: | Thin solid films Vol. 515; no. 4; pp. 2644 - 2649 |
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Main Authors: | , , |
Format: | Journal Article |
Language: | English |
Published: |
Lausanne
Elsevier B.V
05-12-2006
Elsevier Science |
Subjects: | |
Online Access: | Get full text |
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Summary: | This work reports on the photoelectrochemical properties of an interface comprised by poly(terthiophene) films electrochemically synthesized onto indium–tin oxide substrates and modified with 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61. Important photoelectrical parameters, such as flat band potential, density of charge carriers and depletion layer width were determined for the pristine and hybrid films. The cathodic photocurrent reflected the p-type semiconducting behavior of the electrosynthesized poly(terthiophene)s. Addition of the acceptor molecule improves the photocurrent at zero bias (∼6 μA cm−2 at 100 mW cm−2) indicating the fullerene derivative acts as an exciton dissociation center, improving the number of charge carriers transported through the polymer to reach the solid–liquid electrolyte interface. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2006.04.021 |