Electrochemical deposition of nanocrystalline PbSe layers onto p-Si (100) wafers

• Published in: Thin solid films Vol. 487; no. 1; pp. 49 - 53
• Main Authors: Ivanou, D.K., Streltsov, E.A., Fedotov, A.K., Mazanik, A.V.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 01-09-2005; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electrodeposition; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; PbSe; Physics; Semiconductors; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); PbSe; Electrodeposition; Semiconductors; Si; Lead selenides; Metals; Electrocrystallization; Surfaces; Ions; Substrates; Nanoparticles; Wafers; Illumination; Oxidation; Silicon; Selenium; Layers; Nanocrystal
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.01.033

Electrochemical deposition of PbSe nanocrystals onto
p-Si(100) was studied in dark and under illumination. The underpotential deposition of lead on selenium was used for PbSe electrosynthesis. It was shown that electrocrystallization of PbSe in dark conditions can proceed only at the presence of lead nanoparticles (Pb
0) on Si surface. The particles were formed using two methods: either cathodic deposition of metal or silicon oxidation by Pb
2+ ions in solution. Photoelectrochemical deposition of PbSe on
p-Si (100) substrates proceeds without the preliminary stage of Pb
0 formation. Si/PbSe heterostructures formed both in dark and under illumination were characterized by cyclic voltammetry, SEM, EDX, AFM and XRD.