Scanning tunneling microscopy of cleaved Si and GaAs surfaces in air

• Published in: Japanese Journal of Applied Physics Vol. 28; no. 2; pp. L290 - L292
• Main Authors: TANIMOTO, M, FURUTA, T, KURIYAMA, Y
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01-02-1989
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Gallium Arsenides; Scanning tunneling microscopy; Semiconductor materials; Cleavage; Silicon; Experimental study; Microstructure; Inorganic compound; Surface
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.28.l290

Microstructures on cleaved Si and GaAs surfaces were directly observed in air by scanning tunneling microscopy (STM). Although an atom-resolved image of surface structures was not obtained, microstructures 15–40 nm in size and 1–30 nm in height were imaged. The comparison between STM and SEM images indicated that STM images reflect the microstructures on cleaved Si and GaAs surfaces. These results revealed that STM measurements are applicable to the characterization of semiconductor surface structures even in air.