Spectroscopic ellipsometry on Si/SiO2/graphene tri-layer system exposed to downstream hydrogen plasma: Effects of hydrogenation and chemical sputtering

• Published in: Applied physics letters Vol. 106; no. 1
• Main Authors: Eren, Baran, Fu, Wangyang, Marot, Laurent, Calame, Michel, Steiner, Roland, Meyer, Ernst
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 05-01-2015
• Subjects: Applied physics; Downstream effects; Electromagnetic absorption; Electron transport; Energy transmission; Graphene; Hydrogen ions; Hydrogen plasma; Hydrogen storage; Hydrogen-based energy; Hydrogenation; Light transmission; Organic chemistry; Plasma; Silicon dioxide; Spectroellipsometry; Sputtering
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4905597

In this work, the optical response of graphene to hydrogen plasma treatment is investigated with spectroscopic ellipsometry measurements. Although the electronic transport properties and Raman spectrum of graphene change after plasma hydrogenation, ellipsometric parameters of the Si/SiO2/graphene tri-layer system do not change. This is attributed to plasma hydrogenated graphene still being electrically conductive, since the light absorption of conducting 2D materials does not depend on the electronic band structure. A change in the light transmission can only be observed when higher energy hydrogen ions (30 eV) are employed, which chemically sputter the graphene layer. An optical contrast is still apparent after sputtering due to the remaining traces of graphene and hydrocarbons on the surface. In brief, plasma treatment does not change the light transmission of graphene; and when it does, this is actually due to plasma damage rather than plasma hydrogenation.