Measurement of elastic constants of MBE grown (Ga0.5Al0.5)As mixed thin film crystal by diffuse X-ray scattering

• Published in: Japanese Journal of Applied Physics Vol. 25; no. 9; pp. 1317 - 1322
• Main Authors: KASHIWAGURA, N, KASHIHARA, Y, HARADA, J
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01-09-1986
• Subjects: Condensed matter: structure, mechanical and thermal properties; Elasticity, elastic constants; Exact sciences and technology; Mechanical and acoustical properties of condensed matter; Mechanical properties of solids; Physics; Elastic constant; Semiconductor materials; Aluminium Gallium Arsenides Mixed; Experimental study; X ray diffraction; Diffuse scattering; Inorganic compound; Thin film
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.25.1317

By a measurement of X-ray thermal diffuse scattering and an analysis based on a least squares fitting procedure, it was demonstrated that a set of elastic constants could be determined for an MBE grown (Ga
0.5
Al
0.5
)As mixed crystal of 4 µm thickness. The absolute value of
C
11
and the ratios of the elastic constants,
C
12
/
C
11
and
C
44
/
C
11
, were determined to be 13.32±0.35 [×10
11
dyn/cm
2
], 0.418±0.021 and 0.473±0.013, respectively, for the sample. It turned out that the elastic constants of the mixed thin film crystal was slightly higher than that expected from the linear interpolation between GaAs and AlAs.