A boundary layer model for the MOCVD process in a vertical cylinder reactor

The transport process in metalorganic chemical vapor deposition (MOCVD) is investigated for a vertical reactor where two kinds of reactants are mixed just above the horizontally-attached substrate. A boundary layer model is developed and the epitaxial growth of the compound semiconductor is describe...

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Bibliographic Details
Published in:	Japanese Journal of Applied Physics Vol. 26; no. 9; pp. 1416 - 1421
Main Authors:	SHIBATA, N, ZEMBUTSU, S
Format:	Journal Article
Language:	English
Published:	Tokyo Japanese journal of applied physics 01-09-1987
Subjects:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics Crystal growth Semiconductor materials Epitaxial reactor Epitaxy Organometallic compound Theoretical study Zinc Selenides Experimental study Chemical vapor deposition Boundary layer Thin film
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