A boundary layer model for the MOCVD process in a vertical cylinder reactor

• Published in: Japanese Journal of Applied Physics Vol. 26; no. 9; pp. 1416 - 1421
• Main Authors: SHIBATA, N, ZEMBUTSU, S
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01-09-1987
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Crystal growth; Semiconductor materials; Epitaxial reactor; Epitaxy; Organometallic compound; Theoretical study; Zinc Selenides; Experimental study; Chemical vapor deposition; Boundary layer; Thin film
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.26.1416

The transport process in metalorganic chemical vapor deposition (MOCVD) is investigated for a vertical reactor where two kinds of reactants are mixed just above the horizontally-attached substrate. A boundary layer model is developed and the epitaxial growth of the compound semiconductor is described. The model predicts that the growth rate is a function of reactant partial pressure, boundary layer thickness and the degree of mixing. It also predicts that uniformity in thickness is obtained by controling the homogeneity of mixing. Results of experimental studies on ZnSe epitaxial growth rate agree well with the calculated growth rate.