Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane

• Published in: Japanese Journal of Applied Physics Vol. 22; no. 1A; pp. L46 - L48
• Main Authors: Mishima, Yasuyoshi, Hirose, Masataka, Osaka, Yukio, Nagamine, Kunihiro, Ashida, Yoshinori, Kitagawa, Nobuhisa, Isogaya, Kazuyoshi
• Format: Journal Article
• Language: English
• Published: 01-01-1983
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.22.L46

Silicon thin-films have been deposited by the direct photolysis of disilane at a substrate temperature below 300°C. The growth rate depends on irradiation intensity of a low pressure mercury-lamp, and a typical rate of 15 Å/min has been obtained under ∼0.08 watts/cm
2
illumination, regardless of substrate temperature. The deposited films are composed of an amorphous network containing bonded-hydrogen in the range 6–9 at.%. The bonding configurations of SiH groups varied from silicon dihydride to monohydride with increasing substrate temperature, and correspondingly the dark conductivity decreased from 10
-7
to 10
-11
Ω
-1
cm
-1
. A broad photoluminescence peak at 1.4 eV was observed for a specimen grown at 200°C.