Random distribution of Ga and Al atoms in MBE grown (Al0,5Ga0,5)As

• Published in: Japanese Journal of Applied Physics Vol. 23; no. 12; pp. 901 - 903
• Main Authors: KASHIHARA, Y, KASHIWAGURA, N, SAKATA, M, HARADA, J, ARII, T
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01-01-1984
• Subjects: Condensed matter: structure, mechanical and thermal properties; Diffusion in solids; Exact sciences and technology; Physics; Self-diffusion and ionic conduction in nonmetals; Transport properties of condensed matter (nonelectronic); Self diffusion; Short range order; Experimental study; Inorganic compound
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.23.l901

The observation of diffuse scattering due to short-range order (SRO) between Al and Ga atoms in (Al
0.5
Ga
0.5
)As which were grown by molecular beam epitaxy, has been made using both electron and X-ray diffraction methods. Only diffuse streaks along the directions were detected, the origin of which must be low frequency transverse acoustic phonons. The absence of SRO diffuse scattering is considered evidence of random distribution of Al and Ga atoms in this substance, consistent with the thermodynamical calculation by Onabe (K. Onabe, Jpn. J. Appl. Phys. 21 (1982) L323).