Hydrogenated amorphous silicon produced by pyrolysis of disilane in a hot wall reactor

• Published in: Japanese Journal of Applied Physics Vol. 23; no. 3; pp. L129 - L131
• Main Authors: ASHIDA, Y, MISHIMA, Y, HIROSE, M, OSAKA, Y, KOJIMA, K
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01-01-1984
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Non metal; Temperature; Hot wall growth; Impurity; Support; Hydrogen; Silicon; Kinetics; Amorphous state; Experimental study; Chemical vapor deposition; Thin film
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.23.l129

Deposition kinetics and physical properties of hydrogenated amorphous silicon produced by low-pressure chemical vapor deposition of disilane have been investigated as a function of substrate temperature using a hot wall type reactor. The high growth rate of more than 8 A/sec has been achieved at a substrate temperature of 450°C and the hydrogen content is about 9 at.%. The optical bandgap never exceeds 1.6 eV even for a hydrogen content of 18 at.% and the spin density is as low as ∼10
16
cm
-3
.