Saturation currents in small-geometry bipolar transistors
Small-geometry transistor structures resulting from oxide-and groove-isolated processes are described. Methods for accurate determination of saturation currents are described, Experimental results from the two transistor structures are given and discussed. The results serve to demonstrate that data...
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| Published in: | IEEE transactions on electron devices Vol. 31; no. 1; pp. 80 - 82 |
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| Main Author: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
IEEE
01-01-1984
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| Online Access: | Get full text |
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| Summary: | Small-geometry transistor structures resulting from oxide-and groove-isolated processes are described. Methods for accurate determination of saturation currents are described, Experimental results from the two transistor structures are given and discussed. The results serve to demonstrate that data on saturation currents provide information useful in process control and in understanding the characteristics of small-geometry devices. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1984.21477 |