Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 54; no. 1; pp. 144 - 149
• Main Authors: Il’inskaya, N. D., Lebedeva, N. M., Zadiranov, Yu. M., Ivanov, P. A., Samsonova, T. P., Kon’kov, O. I., Potapov, A. S.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 2020; Springer; Springer Nature B.V
• Subjects: Epitaxy; Fabrication; Field effect transistors; Inclination angle; Ion beams; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Plasma etching; Reactive ion etching; Schottky diodes; Semiconductor devices; Semiconductors; Silicon carbide; Testing of Materials and Structures; Treatment; microwave field transistors; mesa structures; etching of SiC
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782620010108

Methods of micro-profiling of 4
H
-SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45°) by reactive ion etching; etching of mesa structures with a flat bottom and inclined walls (off-vertical wall inclination angle being smaller than 45°) by ion-beam and reactive ion plasma etching. The application of etching methods in the fabrication technology of 4
H
-SiC-based mesa-epitaxial field-effect transistors with a Schottky gate is demonstrated.