Miniaturized UWB Filters Integrated With Tunable Notch Filters Using a Silicon-Based Integrated Passive Device Technology

• Published in: IEEE transactions on microwave theory and techniques Vol. 60; no. 3; pp. 518 - 527
• Main Authors: Zhengzheng Wu, Shim, Yonghyun, Rais-Zadeh, M.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-03-2012; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Band pass filters; Bandpass filters; Capacitors; Circuit properties; Design. Technologies. Operation analysis. Testing; Devices; Electric, optical and optoelectronic circuits; Electronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Frequency filters; Inductors; Integrated circuits; Integrative passive devices (IPDs) and modules; interference suppression; Linearity; Materials handling; MEMS or microelectromechanical systems; Micro- and nanoelectromechanical devices (mems/nems); Micromechanical devices; Noise levels; Notch filters; Radio frequency; Rejection; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon substrates; Substrates; tunable filters; Tuning; ultra-wideband; Passive component; GHz range; Micromachine; Implementation; Thermal stability; Microelectronic fabrication; Notch filter; ultra-wideband; Band pass filter; Monolithic integrated circuit; Die; tunable filters; Wide band circuit; Return loss; Micromachining; Wide band transmission; Compact design; Ultra wide band; Interference suppression; Tunable filter; Linearity; Integrated circuit; Insertion loss; Integrative passive devices (IPDs) and modules; Signal processing; Miniaturization; MEMS or microelectromechanical systems
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2011.2178428

This paper reports on the implementation of miniaturized ultra-wideband filters integrated with tunable notch filters using a silicon-based integrated passive device technology. An ultra-wideband bandpass filter is realized on a micromachined silicon substrate, showing an insertion loss of 1.1 dB, return loss of better than 15 dB, and attenuation of more than 30 dB at both lower and upper stop-bands, with a spurious-free response up to 40 GHz. The filter occupies only 2.9 mm 2.4 mm of die area. To address the in-band interference issues associated with ultra-wideband communication, very compact tunable notch filters are monolithically integrated with the bandpass filters. A two-pole tunable notch filter integrated with an ultra-wideband filter provides more than 20 dB rejection in the 5-6 GHz range to reject U-NII interferences, with a total footprint of 4.8 mm 2.9 mm. The power handling, linearity, and temperature stability of filters are characterized and presented in this paper.