Rise time of voltage pulses in NbN superconducting single photon detectors

We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its...

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Bibliographic Details
Published in:	Applied physics letters Vol. 109; no. 5
Main Authors:	Smirnov, K. V., Divochiy, A. V., Vakhtomin, Yu. B., Sidorova, M. V., Karpova, U. V., Morozov, P. V., Seleznev, V. A., Zotova, A. N., Vodolazov, D. Yu
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 01-08-2016
Subjects:	ABSORPTION Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Dependence Detectors ELECTRIC POTENTIAL INDUCTANCE LENGTH Niobium nitride NIOBIUM NITRIDES NONLINEAR PROBLEMS Photon absorption PHOTONS PULSE RISE TIME PULSES Quantum theory Sensors SUPERCONDUCTING DEVICES Superconductivity Voltage pulses
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Summary:	We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.4960533