Reduction mechanism of dislocation density in GaAs films on Si substrates

• Published in: Japanese Journal of Applied Physics Vol. 32; no. 1B; pp. 632 - 636
• Main Authors: SHIMOMURA, H, OKADA, Y, MATSUMOTO, H, KAWABE, M, KITAMI, Y, BANDO, Y
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 1993
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Crystal growth; Semiconductor materials; Epitaxy; Experimental study; Optimization; Inorganic compound; Thin film; Dislocation; Dislocation density; Gallium Arsenides; Transmission electron microscopy; Reflection high energy electron diffraction; Molecular beam condensation; Heteroepitaxy; Low temperature
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.32.632

Significant reduction of dislocation densities in GaAs films grown on Si substrates have been demonstrated. High-quality GaAs films on Si with average etch-pit density on the order of 10
4
cm
-2
have been obtained by combining the low-temperature growth technique and the atomic hydrogen irradiation. The reduction mechanism of dislocation density in GaAs on Si as well as possible growth kinetics have been discussed based on reflection high-energy electron diffraction (RHEED) and transmission electron microscope (TEM) observations. Most of the threading dislocations have annihilated in the low-temperature grown GaAs layers by forming closed loops. As a consequence of the dislocation density reduction, the electron mobilities of GaAs films on Si have been improved.