Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing

This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It is shown that this technique can be used to define the safe operating area

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Bibliographic Details
Published in:	IEEE transactions on nuclear science Vol. 53; no. 6; pp. 3145 - 3152
Main Authors:	Miller, F., Luu, A., Prud'homme, F., Poirot, P., Gaillard, R., Buard, N., Carriere, T.
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-12-2006 The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Institute of Electrical and Electronics Engineers
Subjects:	Breakdown voltage Burnout Capacitors Circuit testing Devices Fuel consumption Irradiation laser Lasers Methodology MOSFET MOSFET circuits MOSFETs Neutrons Nuclear Experiment Nuclear power generation Nuclear Theory Performance evaluation Physics Power lasers Power MOSFET Power supplies Protons Single-Event Burnout (SEB) Voltage MOSFET laser single-event burnout (SEB) burnout breakdown voltage
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Description
Summary:	This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It is shown that this technique can be used to define the safe operating area
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2006.885376