Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode

Using the numerical solution to the Schrödinger equation, current-voltage characteristics of the resonant-tunneling diode with spacer layers were obtained. The dependences of the peak current of the resonant-tunneling diode on the emitter spacer width were plotted. It was shown that the peak current...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 44; no. 8; pp. 1034 - 1039
Main Authors: Remnev, M. A., Kateev, I. Yu, Elesin, V. F.
Format: Journal Article
Language:English
Published: Dordrecht SP MAIK Nauka/Interperiodica 01-08-2010
Springer
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Summary:Using the numerical solution to the Schrödinger equation, current-voltage characteristics of the resonant-tunneling diode with spacer layers were obtained. The dependences of the peak current of the resonant-tunneling diode on the emitter spacer width were plotted. It was shown that the peak current depends periodically on the emitter spacer width. The constructed electron density diagrams showed that the increase in the peak current is associated with the resonant level in the emitter spacer region.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610080142