Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed...

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Bibliographic Details
Published in:	Semiconductors (Woodbury, N.Y.) Vol. 54; no. 8; pp. 951 - 955
Main Authors:	Akimov, A. N., Akhundov, I. O., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Paschin, N. S., Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E., Fedosenko, E. V., Sherstyakova, V. N.
Format:	Journal Article
Language:	English
Published:	Moscow Pleiades Publishing 01-08-2020 Springer Springer Nature B.V
Subjects:	2020 Energy spectra Magnetic Materials Magnetism March 10–13 Nizhny Novgorod Photoconductivity Physics Physics and Astronomy Radiation, Background Xxiv International Symposium “Nanophysics and Nanoelectronics” photoconductivity impurity states surface states PbSnTe
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Summary:	The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782620080035