Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 54; no. 10; pp. 1325 - 1331
• Main Authors: Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Matyushenko, E. V., Neizvestny, I. G., Sidorov, G. Yu, Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E., Epov, V.S.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-10-2020; Springer; Springer Nature B.V
• Subjects: 2020; Composition; Curie temperature; Epitaxial growth; Ferroelectric materials; Ferroelectricity; Insulators; Magnetic Materials; Magnetism; March 10–13; MIS (semiconductors); Molecular beam epitaxy; Nizhny Novgorod; Phase transitions; Physics; Physics and Astronomy; Radiation, Background; Semiconductors; Xxiv International Symposium “Nanophysics and Nanoelectronics”; PbSnTe:In solid solution; MIS structure; ferroelectric phase transition; field effect
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782620100164

The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of the films can be due to a ferroelectric phase transition with a Curie temperature in the range of about
T
≈ 15–20 K.