Anodic silicon etching; the formation of uniform arrays of macropores or nanowires

• Published in: Physica status solidi. A, Applied research Vol. 197; no. 1; pp. 57 - 60
• Main Authors: van den Meerakker, J. E. A. M., Elfrink, R. J. G., Weeda, W. M., Roozeboom, F.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01-05-2003; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: 61.43.Gt; 61.46.+w; 82.45.Yz; Chemistry; Colloidal state and disperse state; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Disordered solids; Exact sciences and technology; General and physical chemistry; Materials science; Nanoscale materials and structures: fabrication and characterization; Physics; Porous materials; Powders, porous materials; Structure of solids and liquids; crystallography; Surface cleaning, etching, patterning; Surface treatments; Semiconductor materials; Surface treatments; Nanostructures; Experimental study; Template; Pore; Anodizing; Wires; Nonmetals; MOS capacitors; Silicon; Arrays; Electrochemical etching; Macroporosity
• ISSN: 0031-8965; 1521-396X
• DOI: 10.1002/pssa.200306468

Macropore formation on p‐type Si in the dark has been studied on 6‐inch wafers in aqueous HF solution. More than 109 pores with a diameter of 2.5 μm and a depth of 100 μm are obtained in a single etch step. These pores can be used as a template for the fabrication of high‐density MOS capacitors. If the current density is close to the characteristic peak for the anodic etching of Si in HF solutions, nanowires are obtained. The length of these wires can reach values up to 100 μm, while their width can be as small as 30 nm. This method is a suitable way to the high‐volume production of nanowires.