40-Gb/s Low Chirp Electroabsorption Modulator Integrated With DFB Laser

• Published in: IEEE photonics technology letters Vol. 21; no. 6; pp. 356 - 358
• Main Authors: Yuanbing Cheng, Yuanbing Cheng, Jiaoqing Pan, Jiaoqing Pan, Yang Wang, Yang Wang, Fan Zhou, Fan Zhou, Baojun Wang, Baojun Wang, Lingjuan Zhao, Lingjuan Zhao, Hongliang Zhu, Hongliang Zhu, Wei Wang, Wei Wang
• Format: Journal Article
• Language: English
• Published: New York IEEE 15-03-2009; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 40 Gb/s; Capacitance; Chirp; Chirp modulation; Conferences; Devices; Distributed-feedback (DFB) laser; electroabsorption modulator (EAM); Electroabsorption modulators; Electrodes; Extinction ratio; Fiber lasers; Fiber optics; low chirp; monolithic integration; Optical fiber devices; Optical fibers; Quantum well devices; selective area growth (SAG); Semiconductor lasers; Threshold current; Transmitters; Waveguide lasers
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2008.2011652

A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroabsorption modulator (EAM) with lumped electrode and a distributed-feedback semiconductor laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 20 mA, over 40-dB sidemode suppression ratio at 1550 nm, and more than 30-dB DC extinction ratio when coupled into a single-mode fiber. By adopting a deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene, the capacitance of the EAM is reduced to 0.18 pF and the small-signal modulation bandwidth exceeds 33 GHz. Negative chirp operation is also realized when the bias voltage is beyond 1.6 V.