A 60 GHz Broadband Low-Noise Amplifier With Variable-Gain Control in 65 nm CMOS

• Published in: IEEE microwave and wireless components letters Vol. 21; no. 11; pp. 610 - 612
• Main Authors: HSIEH, Yi-Keng, KUO, Jing-Lin, HUEI WANG, LU, Liang-Hung
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-11-2011; Institute of Electrical and Electronics Engineers
• Subjects: Amplifiers; Applied sciences; Attenuators; Broadband; Broadband communication; Circuit properties; CMOS; CMOS integrated circuits; Design. Technologies. Operation analysis. Testing; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Frequency bands; Gain; Integrated circuits; Linearity; low-noise amplifiers (LNAs); Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Microwaves; millimeter-wave; Noise levels; Noise measurement; positive feedback; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; variable-gain amplifiers; Wide band noise; Attenuators; low-noise amplifiers (LNAs); Low noise amplifier; Microwave; Feedback regulation; Gain control; millimeter-wave; Variable gain amplifier; Implementation; variable-gain amplifiers; positive feedback; Millimetric wave; Impedance matching; Frequency band; Wide band; Feedback; Complementary MOS technology; broadband; Attenuator; Microwave amplifier; Gain
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2011.2167134

A 60 GHz low-noise amplifier (LNA) implemented in a 65 nm CMOS process is presented. Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA exhibits a broadband response and four programmable gain levels from 18.9 to 7.9 dB while maintaining impedance matching at the 60 GHz frequency band. The fabricated circuit consumes a dc current of 25 mA from a 1.8 V supply.