10-kV SiC MOSFET-Based Boost Converter

• Published in: IEEE transactions on industry applications Vol. 45; no. 6; pp. 2056 - 2063
• Main Authors: Jun Wang, Xiaohu Zhou, Jun Li, Tiefu Zhao, Huang, A.Q., Callanan, R., Husna, F., Agarwal, A.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-11-2009; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Boost converter; Circuits; Converters; Diodes; Direct current; Electric potential; Electric power; Frequency conversion; high frequency; high temperature; junction barrier Schottky (JBS) diode; loss; MOSFET; MOSFETs; Power generation; Power system modeling; Schottky diodes; Silicon carbide; silicon carbide (SiC); SPICE; Spices; Temperature; Testing; Voltage
• ISSN: 0093-9994; 1939-9367
• DOI: 10.1109/TIA.2009.2031915

10-kV silicon carbide (SiC) MOSFETs are currently being developed by a number of organizations in the U.S. with prospective applications in high-voltage and high-frequency power-electronic systems. The aim of this paper is to demonstrate the high-frequency and high-temperature capability of 10-kV SiC MOSFETs in the application of a dc/dc boost converter. In this study, 10-kV SiC MOSFET and junction barrier Schottky (JBS) diode were characterized and modeled in SPICE. Following this, a dc/dc boost converter based on a 10-kV 10-A MOSFET and a 10-kV 5-A JBS diode was designed and tested under continuous operation for frequencies up to 25 kHz. The boost converter had an output voltage of 4 kV, an output power of 4 kW, and operated with a junction temperature of 174degC for the SiC MOSFET. The fast-switching speed, low losses, and high-temperature operation capability of 10-kV SiC MOSFETs demonstrated in the dc/dc boost converter make them attractive for high-frequency and high-voltage power-conversion applications.