GaN-based p-i-n sensors with ITO contacts

• Published in: IEEE sensors journal Vol. 6; no. 2; pp. 406 - 411
• Main Authors: Chang, S.J., Ko, T.K., Su, Y.K., Chiou, Y.Z., Chang, C.S., Shei, S.C., Sheu, J.K., Lai, W.C., Lin, Y.C., Chen, W.S., Shen, C.F.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-04-2006; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum gallium nitride; Annealing; Breakdown; Capacitive sensors; Dark current; Electric potential; Electrodes; Gallium nitride; Gallium nitrides; GaN; Indium tin oxide; indium-tin-oxide (ITO); p-i-n; photodetectors; PIN photodiodes; Sensor phenomena and characterization; Sensors; Strain; strain layer superlattice (SLS); Superlattices; Voltage; Wavelengths
• ISSN: 1530-437X; 1558-1748
• DOI: 10.1109/JSEN.2006.870151

Nitride-based p-i-n sensors with indium-tin-oxide electrodes on Mg-doped AlGaN/GaN strain layer superlattice structure were fabricated and characterized. It was found that the fabricated sensors exhibit small dark current and large reverse breakdown voltage. With an incident wavelength of 355 nm, we achieved a peak responsivity of 0.17 A/W which corresponds to 59% external quantum efficiency for sensors with 500/spl deg/C annealed ITO(70 nm) p-contacts.