Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks

• Published in: IEEE journal of solid-state circuits Vol. 41; no. 9; pp. 2166 - 2176
• Main Authors: Neo, W.C.E., Yu Lin, Xiao-dong Liu, de Vreede, L.C.N., Larson, L.E., Spirito, M., Pelk, M.J., Buisman, K., Akhnoukh, A., Anton de Graauw, Nanver, L.K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01-09-2006; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Adaptive matching network; Amplifiers; Applied sciences; Bands; Circuit properties; Communication system control; Dielectric breakdown; Diodes; dynamic loadline; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Gain; Germanium silicon alloys; high efficiency; Impedance matching; Matching; multi-band; multi-mode; Networks; Noise levels; power amplifier; Power amplifiers; Power control; Power generation; RF adaptivity; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon germanides; Silicon germanium; Transistors; Varactors; Performance evaluation; multi-mode; Semiconductor alloys; Tunable circuit; Output power; High voltage transistor; High Q factor; RF adaptivity; dynamic loadline; Load impedance; Varactor diode; Power control; Class AB; high efficiency; Active component; Adaptive matching network; multi-band; Power amplifier; Gain; Damaging
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2006.880586

This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q>100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t =50 GHz) high voltage breakdown transistor (VCBO=14 V, VCEO>3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2