Effect of the doping element on the structure and UV–visible properties in the system Bi4V1.7(Si,Me)0.3O11-δ (Me = Si, P, Cu, and Co)

• Published in: Ionics Vol. 29; no. 11; pp. 4923 - 4932
• Main Authors: Agnaou, A., Mhaira, W., Essalim, R., Alga, M., Zamama, M., Mauvy, F., Ammar, A.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01-11-2023; Springer Nature B.V; Springer Verlag
• Subjects: Chemical Sciences; Chemistry; Chemistry and Materials Science; Condensed Matter Physics; Diffuse reflectance spectroscopy; Electrical resistivity; Electrochemistry; Energy gap; Energy Storage; Infrared spectroscopy; Low temperature; Material chemistry; Optical and Electronic Materials; Raman spectroscopy; Renewable and Green Energy; Room temperature; Spectrophotometry; X ray powder diffraction; BISIMEVOX.15; SEM; UV–visible; XRD; DSC
• ISSN: 0947-7047; 1862-0760
• DOI: 10.1007/s11581-023-05185-7

While BIMEVOX systems have attracted the attention of researchers for their electrical conductivity by O
2−
oxide ions at relatively low temperatures, there is only a limited number of works concerning their local structure. In this work, the Bi
4
V
1.7
(Si.Me)
0.3
O
11-δ
(Me = Si, P, Cu, and Co) system is studied using X-ray powder diffraction (XRD), Raman spectroscopy, IR spectroscopy, SEM–EDX, UV–visible spectrophotometry, and differential scanning calorimetry (DSC). The three main polymorphs α, β, and γ are obtained at room temperature. In the case of the Bi
4
Si
0.15
P
0.15
V
1.70
O
11-δ
compound, two successive structural transitions were observed, while only one structural transition was observed for the Bi
4
Si
0.30
V
1.70
O
11-δ
compound. The UV–vis diffuse reflectance spectroscopy (DRS) indicates that the double-doped Bi
4
V
1.7
(Si.Me)
0.3
O
11-δ
compounds present a band gap energy in the range 1.76 ≤ Eg ≤ 2.36 eV and Bi
4
Si
0.15
Co
0.15
V
1.70
O
11-δ
presents the narrowest band gap.