A Systematical Study on Bands and Defects of CsBX3 (B = Pb, Sn, Ge, X = Cl, Br, I) Perovskite Based on First Principles

• Published in: Molecules (Basel, Switzerland) Vol. 29; no. 11; p. 2479
• Main Authors: Zhang, Chunqian, Wang, Hao, Huang, Wenqi, Zuo, Yuhua, Cheng, Jin
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 24-05-2024; MDPI
• Subjects: defects; Efficiency; Energy; first principles calculations; inorganic lead-free perovskite; Point defects; Toxicity
• ISSN: 1420-3049; 1420-3049
• DOI: 10.3390/molecules29112479

Metal halide perovskites have attracted considerable attention as novel optoelectronic materials for their excellent optical and electrical properties. Inorganic perovskites (CsPbX3, X = Cl, Br, I) are now viable alternative candidates for third-generation photovoltaic technology because of their high photoelectric conversion efficiency, high carrier mobility, good defect tolerance, simple preparation method and many other advantages. However, the toxicity of lead is problematic for practical implementation. Thus, the fabrication of lead-free perovskite materials and devices has been actively conducted. In this work, the energy band and photoelectric properties of inorganic perovskites CsBX3 (B = Pb, Sn, Ge, X = Cl, Br, I) have been investigated with the first principles calculation, and the possible defect energy levels and their formation energies in different components, in particular, have been systematically studied. The advantages and disadvantages of Sn and Ge as replacement elements for Pb have been demonstrated from the perspective of defects. This study provides an important basis for the study of the properties and applications of lead-free perovskites.