High-Speed Selector-Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs

• Published in: IEEE electron device letters Vol. 32; no. 8; pp. 1059 - 1061
• Main Authors: Driad, R., Makon, R. E., Ritter, D.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-08-2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Circuit properties; Design. Technologies. Operation analysis. Testing; Doping; Double heterojunction bipolar transistors; Double-heterojunction bipolar transistors (DHBTs); Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Fabrication; Gain; High speed; Indium gallium arsenide; Indium gallium arsenides; Indium phosphide; Indium phosphides; InP; integrated circuit technology; Integrated circuits; Microelectronic fabrication (materials and surfaces technology); Multiplexing; Power consumption; pulse doping; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switching, multiplexing, switched capacity circuits; Transistors; Voltage; Binary compound; Multiplexer; Driver; Indium phosphide; Cut off frequency; Low voltage; Microelectronic fabrication; Electric power consumption; Molecular beam epitaxy; Heterojunction bipolar transistors; High strength current; Doped materials; System design; Planar doping; Compact design; InP; III-V compound; pulse doping; High voltage; Double-heterojunction bipolar transistors (DHBTs); Integrated circuit; Signal processing; High frequency; Current gain; integrated circuit technology; Base collector junction
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2151173

This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) using a thin highly doped n + -InP layer inserted at the base-collector junction. Molecular-beam-epitaxy-grown abrupt pulse-doped InP-InGaAs-InP DHBTs ensure very high current gains of ~ 90, low saturation voltages of less than 1 V, and high cutoff frequencies of ~ 350 GHz. Using this technology, a compact high-speed high-voltage multiplexer-driver integrated circuit (IC) suitable for high-speed signal processing and communication systems has been designed and fabricated. The IC has successfully been measured at 112 Gb/s with very clear eye openings of up to 2 V pp with a power consumption of 2 W.