Effect of surfactants on the data directionality and learning behaviour of Al/TiO2/FTO thin film memristor-based electronic synapse

• Published in: Journal of solid state electrochemistry Vol. 21; no. 9; pp. 2753 - 2757
• Main Authors: Dongale, T. D., Desai, N. D., Khot, K. V., Mullani, N. B., Pawar, P. S., Tikke, R. S., Patil, V. B., Waifalkar, P. P., Patil, P. B., Kamat, R. K., Patil, P. S., Bhosale, P. N.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01-09-2017; Springer Nature B.V
• Subjects: Analytical Chemistry; Biological properties; Characterization and Evaluation of Materials; Chemistry; Chemistry and Materials Science; Condensed Matter Physics; Electrochemistry; Energy Storage; Hysteresis loops; Memristors; Physical Chemistry; Short Communication; Surfactants; Thin films; Titanium dioxide; Titanium oxides; Electronic synapse; Memristor; Surfactant; Neuromorphic computing
• ISSN: 1432-8488; 1433-0768
• DOI: 10.1007/s10008-016-3459-1

The present communication deals with the development of the titanium dioxide (TiO
2
) thin films memristor using simple and cost effective hydrothermal route for neuromorphic application. The developed devices show pinched hysteresis loop in current-voltage (
I-V
) plane, which is the fingerprint characteristic of a memristor. Furthermore, current in the device continuously increases and decreases similar to synaptic weights of the biological neurons. The rectifying property similar to biological synapse is observed in the device which can be converted into the non-rectifying property by the suitable surfactant. The proper surfactant is responsible for the control of data flow in the memristor-based electronic synapse.