A ZnO/ZnMgO Multiple-Quantum-Well Ultraviolet Random Laser Diode

• Published in: IEEE electron device letters Vol. 32; no. 1; pp. 54 - 56
• Main Authors: Long, Hao, Fang, Guojia, Li, Songzhan, Mo, Xiaoming, Wang, Haoning, Huang, Huihui, Jiang, Qike, Wang, Jianbo, Zhao, Xingzhong
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-01-2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Density; Deposition by sputtering; Devices; Diode lasers; Diodes; Electroluminescence (EL); Electronics; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Gallium nitrides; Laser diodes; Laser excitation; Lasers; Lasing; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; multiple quantum wells (MQWs); Nanoscale materials and structures: fabrication and characterization; Optics; Physics; Quantum well devices; Quantum wells; random laser; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor lasers; Semiconductor lasers; laser diodes; Silicon; Substrates; Threshold currents; Ultraviolet; ultraviolet (UV); Zinc oxide; ZnO; ultraviolet (UV); Binary compound; II-VI compound; Diode; Ultraviolet laser; Multiple quantum well; Threshold current; Electroluminescence; Injection laser; Radiofrequency; Gallium nitride; III-V compound; multiple quantum wells (MQWs); n type semiconductor; Electroluminescence (EL); Zinc oxide; ZnO; Cathodic sputtering; Current density; Wafer; Room temperature; random laser
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2010.2089424

A ZnO/ZnMgO multiple-quantum-well ultraviolet (UV) random laser diode was fabricated on a commercially available n-type GaN wafer using a radio frequency magnetron sputtering system. The electroluminescence measurements revealed that the diode exhibited fairly pure UV random lasing centered at ~370 nm under sufficient forward bias at room temperature. The full-widths at half-maximum of the sharp lasing peaks are less than 0.4 nm. The device has a very low threshold current density of 4.7 A/cm 2 and extremely weak visible emission.