Effect of boron doping on optical properties of sol–gel based nanostructured zinc oxide films on glass

• Published in: Materials research bulletin Vol. 46; no. 12; pp. 2392 - 2397
• Main Authors: Jana, Sunirmal, Vuk, Angela Surca, Mallick, Aparajita, Orel, Boris, Biswas, Prasanta Kumar
• Format: Journal Article
• Language: English
• Published: United States Elsevier Ltd 01-12-2011
• Subjects: A. Nanostructures; A. Semiconductors; A. Thin films; BORON; CRYSTALS; D. Luminescence; D. Optical properties; DEPOSITS; DOPED MATERIALS; GRAIN SIZE; INCIDENCE ANGLE; MATERIALS SCIENCE; NANOSCIENCE AND NANOTECHNOLOGY; NANOSTRUCTURES; OPTICAL PROPERTIES; PARTICLE SIZE; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SOLS; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES; A. Nanostructures; A. Thin films; D. Optical properties; D. Luminescence; A. Semiconductors
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/j.materresbull.2011.08.038

Room temperature fine structured UV–vis PL emissions (a) as phonon replicas in 1
at.% boron doped film originated from LO phonon evidenced from Near Grazing Incidence Angle (NGIA) IR spectral study (b).
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► Sol–gel based boron doped nanostructured ZnO thin films deposited on pure silica glass using crystalline boric acid as boron source. ► Observed first time, room temperature fine structured PL emissions in 1
at.% doped film as phonon replicas originated from LO phonon (both IR and Raman active). ► Boron doping controls the LO phonon energy in addition to visible reflection, band gap and grain size. ► The films possessed mixed crystal phases with hexagonal as major phase.
Boron doped zinc oxide thin films (∼80
nm) were deposited onto pure silica glass by sol–gel dip coating technique from the precursor sol/solution of 4.0
wt.% equivalent oxide content. The boron concentration was varied from 0 to 2
at.% w.r.t. Zn using crystalline boric acid. The nanostructured feature of the films was visualized by FESEM images and the largest cluster size of ZnO was found in 1
at.% boron doped film (B1ZO). The presence of mixed crystal phases with hexagonal as major phase was identified from XRD reflections of the films. Particle size, optical band gap, visible specular reflection, room temperature photoluminescence (PL) emissions (3.24–2.28
eV), infra-red (IR) and Raman active longitudinal optical (LO) phonon vibration were found to be dependent on dopant concentration. For the first time, we report the room temperature fine structured PL emissions as phonon replicas originated from the LO phonon (both IR and Raman active) in 1
at.% boron doped zinc oxide film.