Multifunctional Field-Effect Transistor for High-Density Integrated Circuits

• Published in: IEEE electron device letters Vol. 32; no. 3; pp. 264 - 266
• Main Authors: Marino, F A, Meneghesso, G
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-03-2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Alternative complementary metal-oxide-semiconductor (CMOS) technology; Applied sciences; Circuit properties; Circuits; CMOS; Design. Technologies. Operation analysis. Testing; Devices; DH-HEMTs; Digital circuits; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Integrated circuits; Logic gates; Metal oxide semiconductors; metal-oxide-semiconductor field-effect transistor (MOSFET) device; MOS devices; MOSFET circuits; multifunctional metal-oxide-semiconductor (MOS); numerical simulation; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Transistors; Voltage measurement; MOSFET; semiconductor (CMOS) technology; Multifunctionality; High density; Spurious capacity; PMOS technology; multifunctional metal-oxide-semiconductor (MOS); Alternative complementary metal―oxide; Logic circuit; Sequential circuit; Field effect transistor; Manufacturing process; Complementary MOS technology; metal-oxide-semiconductor field-effect transistor (MOSFET) device; Integrated circuit; Numerical simulation; NMOS technology; Combinatory circuit
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2010.2099097

A multifunctional field-effect transistor (FET) for the manufacturing of high-density integrated circuits (ICs) has been developed and fabricated. Furthermore, an extensive numerical device simulation campaign has been carried out in order to characterize the new structure. Such device is a metal-oxide-semiconductor (MOS) FET that simultaneously performs the functions of two traditional FETs (an n-channel MOS and a p-channel MOS), working as one or as the other according to the voltage applied to the gate's terminal. Combinational and sequential circuits employing the new technology introduce, with respect to the standard complementary MOS (CMOS) ones, a drastic reduction of both the required device number and the parasitic capacitances. This leads to a significant increase in the circuit's speed. Furthermore, the ICs obtained with these transistors are fully compatible with the standard CMOS technology and fabrication process.