Thermal annealing behavior of an oxide layer under silicon

• Published in: Applied physics letters Vol. 41; no. 12; pp. 1143 - 1145
• Main Authors: Hamdi, A. H., McDaniel, F. D., Pinizzotto, R. F., Matteson, S., Lam, H. W., Malhi, S. D. S.
• Format: Journal Article
• Language: English
• Published: 15-12-1982
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.93413

High resolution Rutherford backscattering spectrometry and ion channeling have been employed to evaluate the crystallinity of the surface silicon layer in oxygen implanted silicon. The quality of the top surface layer was determined by measuring the minimum yields along 〈110〉 directions in channeling spectra. Single crystal (100) silicon was implanted with 300 keV O+2 to a dose of 1.06×1018 O+2 /cm2. Measurements of residual damage of the top layer were made after annealing the samples at 1150 °C for times ranging from 10 to 240 min in either Ar or N2. Under the implantation conditions used in this experiment, a uniform oxide layer 0.52 μm thick was buried under a top silicon layer 0.17 μm thick. The buried oxide layer has abrupt silicon to oxide interfaces. The highest quality silicon surface layer was produced after 3-h annealing in an Ar ambient. A lesser quality silicon surface layer was produced by annealing for shorter times or for equivalent times in N2 ambient.