Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector

We report on the detection of terahertz radiation by an on-chip planar asymmetric plasmonic structure in the frequency region above one terahertz. The detector is based on a field-effect transistor that has a dual grating gate structure with an asymmetric unit cell, which provides a geometrical asym...

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Bibliographic Details
Published in:Applied physics letters Vol. 104; no. 26
Main Authors: Boubanga-Tombet, S., Tanimoto, Y., Satou, A., Suemitsu, T., Wang, Y., Minamide, H., Ito, H., Fateev, D. V., Popov, V. V., Otsuji, T.
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 30-06-2014
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Summary:We report on the detection of terahertz radiation by an on-chip planar asymmetric plasmonic structure in the frequency region above one terahertz. The detector is based on a field-effect transistor that has a dual grating gate structure with an asymmetric unit cell, which provides a geometrical asymmetry within the structure. Biasing the detector with a dc source-to-drain current in the linear region of the current-voltage characteristic introduces an additional asymmetry (electrical asymmetry) that enhances the detector responsivity by more than one order of magnitude (by a factor of 20) as compared with the unbiased case due to the cooperative effect of the geometrical and electrical asymmetries. In addition to the responsivity enhancement, we report a relatively low noise equivalent power and a peculiar non-monotonic dependence of the responsivity on the frequency, which results from the multi-plasmonic-cavity structure of the device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4886763