Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON

• Published in: IEEE photonics technology letters Vol. 18; no. 5; pp. 667 - 669
• Main Authors: Lee, E.H., Bang, Y.C., Kang, J.K., Keh, Y.C., Shin, D.J., Lee, J.S., Park, S.S., Kim, I., Lee, J.K., Oh, Y.K., Jang, D.H.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-03-2006; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amplification; Asymmetry; Bandwidth; Channels; Diode lasers; Fiber lasers; Gain; Laser transitions; Laser tuning; Lasers; Optical communication; Optical fibers; Quantum well lasers; Quantum wells; quantum-well (QW) lasers; Semiconductor lasers; Temperature distribution; Upstream; Wavelength division multiplexing; wavelength-division multiplexing (WDM); Wideband
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2006.870115

We report a spectrum-sliced amplified spontaneous emission-injected wide-band gain laser covering a temperature range over 110/spl deg/C as well as entire 32 100-GHz-spaced channels (1533-1558 nm) in 155-Mb/s upstream transmissions over 25 km of single-mode fiber in a wavelength-division-multiplexed passive optical network. The wide-band gain laser diode employs asymmetric multiple quantum-well structure and low antireflection coating in order to widen the gain spectrum.